Metal Additive Distribution in TiO2 and SnO2 Semiconductor Gas Sensor Nanostructured Materials

  1. Arbiol Cobos, Jordi
Dirigida por:
  1. Francisca Peiró Martínez Director/a
  2. Albert Cornet Calveras Director/a

Universidad de defensa: Universitat de Barcelona

Fecha de defensa: 22 de enero de 2002

Tribunal:
  1. Joan Ramon Morante Lleonart Presidente/a
  2. Alberto Romano Rodríguez Secretario/a
  3. Marie-Jose´ Casanove Vocal
  4. Guido Faglia Vocal
  5. José Juan Calvino Gámez Vocal

Tipo: Tesis

Teseo: 80764 DIALNET lock_openTDX editor

Resumen

Recently, there has been an increasing interest in the electronics world for those aspects related to semiconducting gas sensor (SGS) materials. In view of the increasingly strict legal limits for pollutant gas emissions, there is a great interest in developing high performance gas sensors for applications such as controlling air pollution and exhaust gases. In this way, semiconductor gas sensors offer good advantages with respect to other gas sensor devices (such as spectroscopic and optic systems), due to their simple implementation, low cost and good reliability for real-time control systems. In the present work, we have been especially interested in the study of the different ways of metal additive distribution in the most common SGS materials used nowadays and furthermore in the physical and chemical sensing properties they can achieve.