Publicaciones en las que colabora con Guillermo Aragón Torre (26)

2001

  1. Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 27-31

  2. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

2000

  1. Control of phase modulation in InGaAs epilayers

    Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238

1998

  1. Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

    Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877

1997

  1. A work-hardening based model of the strain relief in multilayer graded-buffer structures

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101

  2. Advantages of thin interfaces in step-graded buffer structures

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45

  3. Work-hardening effects in the lattice relaxation of single lay er heterostructures

    Applied Physics Letters, Vol. 71, Núm. 17, pp. 2475-2477

1994

  1. A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 196-199

  2. Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

    Materials Research Society Symposium Proceedings