Publicaciones en las que colabora con DAVID SALES LERIDA (24)

2023

  1. Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

    Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797

2018

  1. THE USE OF AUDIO-VISUAL MATERIAL PRODUCED BY STUDENTS AS A TOOL IN THE LEARNING PROCESS

    11TH INTERNATIONAL CONFERENCE OF EDUCATION, RESEARCH AND INNOVATION (ICERI2018)

2015

  1. Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

    Semiconductor Science and Technology, Vol. 30, Núm. 9

  2. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

2014

  1. Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

    Nanoscale Research Letters, Vol. 9, Núm. 1, pp. 1-8

  2. Transmission electron microscopy of 1D-nanostructures

    Transmission Electron Microscopy Characterization of Nanomaterials (Springer Berlin Heidelberg), pp. 657-701

2013

  1. Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

    Applied Physics Express, Vol. 6, Núm. 11

  2. Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering

    Applied Physics Express, Vol. 6, Núm. 4

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  2. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

  3. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

    Nanoscale Research Letters, Vol. 7

  4. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

    Journal of Physics: Conference Series

  2. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7

  3. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

2009

  1. Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

    Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Critical strain region evaluation of self-assembled semiconductor quantum dots

    Nanotechnology, Vol. 18, Núm. 47

  2. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007