Publicaciones en las que colabora con Ana Sacedon Ayuso (11)

1998

  1. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278

  2. Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

    Thin Solid Films, Vol. 317, Núm. 1-2, pp. 270-273

1997

  1. Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

    Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291

  2. Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 106-109

1996

  1. Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

    Journal of Crystal Growth, Vol. 169, Núm. 4, pp. 649-659

1995

  1. Design of InGaAs linear graded buffer structures

    Applied Physics Letters, pp. 3334

  2. Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

    Applied Physics Letters, Vol. 67, pp. 3632

1994

  1. Dislocation distribution in graded composition InGaAs layers

    Materials Research Society Symposium Proceedings

  2. Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501

  3. Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers

    Applied Physics Letters, Vol. 65, Núm. 19, pp. 2460-2462

  4. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519