Ciencia e Ingeniería de los Materiales
TEP120
University of Sheffield
Sheffield, Reino UnidoPublicaciones en colaboración con investigadores/as de University of Sheffield (59)
2024
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Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
Nanomaterials, Vol. 14, Núm. 4
2023
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Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions
Applied Surface Science, Vol. 607
2022
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Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Scientific Reports, Vol. 12, Núm. 1
2019
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Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
Applied Surface Science, Vol. 485, pp. 29-34
2017
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Proton radiation effect on InAs avalanche photodiodes
Optics Express, Vol. 25, Núm. 3, pp. 2818-2825
2015
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Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
Semiconductor Science and Technology, Vol. 30, Núm. 9
2014
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Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
Nanoscale Research Letters, Vol. 9, Núm. 1, pp. 1-8
2013
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Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy
Applied Physics Express, Vol. 6, Núm. 11
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Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering
Applied Physics Express, Vol. 6, Núm. 4
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
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InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 165, Núm. 1-2, pp. 88-93
2008
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
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Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells
Springer Series in Materials Science (Springer Verlag), pp. 199-221
2007
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Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
Applied Physics Letters, Vol. 90, Núm. 16
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Kinetic considerations on the phase separation of GaInNAs quantum wells
Physica Status Solidi (C) Current Topics in Solid State Physics
2006
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1.3m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
Electronics Letters, Vol. 42, Núm. 16, pp. 922-923
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Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells
Microscopy and Microanalysis
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High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Proceedings of SPIE - The International Society for Optical Engineering
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High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
IEE Proceedings: Optoelectronics
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Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
Applied Physics Letters, Vol. 88, Núm. 19