Publicaciones en colaboración con investigadores/as de National Institute for Materials Science (15)

2021

  1. Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

    Applied Surface Science, Vol. 537

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

2016

  1. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Applied Physics Letters, Vol. 108, Núm. 18

2013

  1. Potential of diamond power devices

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs

2008

  1. n-Type Doping of Diamond

    Physics and Applications of CVD Diamond (Wiley-VCH Verlag GmbH & Co. KGaA), pp. 237-256

2006

  1. Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces

    Physica Status Solidi (A) Applications and Materials Science

  2. n-Type doping of diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 203, Núm. 13, pp. 3358-3366

2005

  1. Admittance spectroscopy for phosphorus-doped n -type diamond epilayer

    Applied Physics Letters, Vol. 86, Núm. 23, pp. 1-3

  2. Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer

    Diamond and Related Materials

2004

  1. Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers

    Diamond and Related Materials

  2. Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes

    Applied Physics Letters, Vol. 84, Núm. 13, pp. 2349-2351

  3. Electrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVD

    Diamond and Related Materials, Vol. 13, Núm. 1, pp. 198-202

  4. Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond

    Physica Status Solidi (A) Applied Research