Publicaciones en colaboración con investigadores/as de Grenoble Alpes University (32)

2023

  1. AlGaN/AlN Stranski-Krastanov Quantum Dots for Highly Efficient Electron Beam-Pumped Emitters: The Role of Miniaturization and Composition to Attain Far UV-C Emission

    ACS Photonics, Vol. 10, Núm. 12, pp. 4225-4235

  2. Barrier height requirements for leakage suppression in diamond power Schottky diodes

    Diamond and Related Materials, Vol. 136

  3. General optimization of breakdown voltage and resistivity on power components in terms of doping level and thickness

    Diamond and Related Materials, Vol. 136

  4. Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

    Diamond and Related Materials, Vol. 134

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

  3. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

  4. Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

    Diamond and Related Materials, Vol. 121

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Normally-OFF Diamond Reverse Blocking MESFET

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 12, pp. 6279-6285

  3. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

    Surfaces, Vol. 3, Núm. 1, pp. 61-71

  3. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  3. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. Device formation and the characterizations

    Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382

  6. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10