Ciencia e Ingeniería de los Materiales
TEP120
Lawrence Berkeley National Laboratory
Berkeley, Estados UnidosPublicaciones en colaboración con investigadores/as de Lawrence Berkeley National Laboratory (5)
2016
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Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy
Journal of Microscopy, Vol. 261, Núm. 1, pp. 27-35
2010
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The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina
International Journal of Materials Research, Vol. 101, Núm. 1, pp. 95-101
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
2008
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
2006
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Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells
Microscopy and Microanalysis