Publicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (17)

1999

  1. Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 66, Núm. 1, pp. 151-156

  2. Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

    Applied Surface Science, Vol. 144-145, pp. 488-491

1996

  1. Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As

    Journal of Applied Physics, Vol. 79, Núm. 11, pp. 8693-8703

1994

  1. Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation

    Journal of Applied Physics, Vol. 76, Núm. 1, pp. 342-346

  2. Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence

    Materials Science and Engineering B, Vol. 24, Núm. 1-3, pp. 124-129

  3. One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

    Journal of Crystal Growth, Vol. 136, Núm. 1-4, pp. 173-178

1993

  1. Cathodoluminescence and photoluminescence studies of dislocations in GaAs/AlGaAs quantum wells

    Journal of Applied Physics, Vol. 74, Núm. 3, pp. 1997-2003

  2. Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

    Semiconductor Science and Technology, Vol. 8, Núm. 6, pp. 1063-1068

  3. Lateral transport in GaAs/AlGaAs quantum wells

    Applied Physics Letters, Vol. 62, Núm. 23, pp. 2992-2994

  4. One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy

    1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

  5. Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures

    Journal of Applied Physics, Vol. 73, Núm. 8, pp. 3769-3781

1992

  1. Low‐Temperature EBIC Study of Zn‐Diffused GaAs p‐n Junctions

    physica status solidi (a), Vol. 129, Núm. 2, pp. 555-567

  2. Luminescence peculiarities on (AlGa)As single quantum well

    Journal of Applied Physics, Vol. 71, Núm. 3, pp. 1552-1554

1991

  1. A model for the zn diffusion in gaas by a photoluminescence study

    Journal of Applied Physics, Vol. 69, Núm. 11, pp. 7585-7593

  2. Cathodoluminescence study of oval defects on QW structures

    Institute of Physics Conference Series

  3. Thermal conversion of n-type GaAs:Si to p type in excess arsenic vapor

    Journal of Applied Physics, Vol. 70, Núm. 7, pp. 3887-3891

  4. Zinc diffusion in GaAs and zinc-induced disordering of GaAs/AlGaAs multiple quantum wells: a multitechnique study

    Optical and Quantum Electronics, Vol. 23, Núm. 7