Ciencia e Ingeniería de los Materiales
TEP120
Centre National de la Recherche Scientifique
París, FranciaPublicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (24)
2024
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Enhancing luminous transmittance and hysteresis width of VO2-based thermochromic coatings by combining GLAD and RGPP approaches
Construction and Building Materials, Vol. 419
2022
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High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
Applied Physics Letters, Vol. 121, Núm. 7
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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, Vol. 12, Núm. 23
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
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Calibration of a cohesive model for fracture in low cross-linked epoxy resins
Polymers, Vol. 10, Núm. 12
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Device formation and the characterizations
Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Applied Physics Letters, Vol. 112, Núm. 10
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
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Power Electronics Device Applications of Diamond Semiconductors
Elsevier, pp. 1-452
2017
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Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Applied Surface Science, Vol. 395, pp. 200-207
2016
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Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 381, pp. 39-44
2015
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TEM study of defects versus growth orientations in heavily boron-doped diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473
2014
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Diamond as substrate for 3C-SiC growth: A TEM study
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306
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Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371
2011
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Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432
2010
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Blocking of indium incorporation by antimony in III-V-Sb nanostructures
Nanotechnology, Vol. 21, Núm. 14
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Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates
Physica Status Solidi (A) Applications and Materials, Vol. 207, Núm. 9, pp. 2023-2028
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Spatially correlated microstructure and superconductivity in polycrystalline boron-doped diamond
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 3
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TEM study of superconducting polycrystalline diamond
AIP Conference Proceedings