Publicaciones en colaboración con investigadores/as de Universidad Autónoma de Madrid (14)

2022

  1. Silver-enriched ZnO:Ag thin films deposited by magnetron co-sputtering: Post annealing effects on structural and physical properties

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 276

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

2017

  1. Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

    Carbon, Vol. 123, pp. 334-343

2016

  1. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

    Scientific Reports, Vol. 6

2015

  1. Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

    Nanotechnology, Vol. 26, Núm. 42

  2. Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

    Microscopy and Microanalysis, Vol. 21, Núm. 4, pp. 994-1005

2013

  1. Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering

    Nanoscale Research Letters, Vol. 8, Núm. 1, pp. 1-10

2011

  1. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Journal of Alloys and Compounds, Vol. 509, Núm. 17, pp. 5400-5407

2004

  1. Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

    Microchimica Acta

2003

  1. N + BF2 and N + C + BF2 high-dose co-implantation in silicon

    Applied Physics A: Materials Science and Processing, Vol. 76, Núm. 5, pp. 791-800

  2. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

  3. Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

    Physica Status Solidi (A) Applied Research

2001

  1. Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, Núm. 3, pp. 361-370

1998

  1. Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 58, Núm. 16, pp. 10705-10708