Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (14)

2011

  1. Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy

    Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581

2010

  1. Exploring semiconductor quantum dots and wires by high resolution electron microscopy

    Journal of Physics: Conference Series

  2. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Nanotechnology, Vol. 21, Núm. 32

  3. Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

    Journal of Physics: Conference Series

  4. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    Applied Surface Science, Vol. 256, Núm. 18, pp. 5659-5661

2009

  1. Column-by-column compositional mapping by Z-contrast imaging

    Ultramicroscopy, Vol. 109, Núm. 2, pp. 172-176

  2. Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)

    Ultramicroscopy

  3. High resolution electron microscopy of GaAs capped GaSb nanostructures

    Applied Physics Letters, Vol. 94, Núm. 4

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

  2. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  3. Incorporation of Sb in InAsGaAs quantum dots

    Applied Physics Letters, Vol. 91, Núm. 26

2006

  1. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658