DANIEL
FERNANDEZ DE LOS REYES
Profesor Titular de Universidad
Publicaciones (63) Publicaciones de DANIEL FERNANDEZ DE LOS REYES
2024
-
Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
Nanomaterials, Vol. 14, Núm. 4
-
Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
-
Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages
Applied Surface Science, Vol. 644
-
Synthesis and Characterization of Multilayered CrAlN/Al2O3 Tandem Coating Using HiPIMS for Solar Selective Applications at High Temperature
ACS Applied Energy Materials, Vol. 7, Núm. 2, pp. 438-449
2023
-
Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras
Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797
-
Evolución de las enseñanzas practicas post-COVID 19: estudio de uncaso en el seno de los grados de ingeniería en tecnología industrial eingeniería mecánica en la Universidad de Cádiz
Brazilian Journal of Development, Vol. 9, Núm. 7, pp. 22973-22994
-
Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions
Applied Surface Science, Vol. 607
-
Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
Nanomaterials, Vol. 13, Núm. 5
-
Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110
-
Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells
2023 14th Spanish Conference on Electron Devices (CDE)
2022
-
Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Scientific Reports, Vol. 12, Núm. 1
-
Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD
Applied Surface Science, Vol. 573
-
Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Applied Surface Science, Vol. 604
-
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, Vol. 12, Núm. 23
-
Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Nanomaterials, Vol. 12, Núm. 8
-
Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
Nanomaterials, Vol. 12, Núm. 14
2021
-
Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features
Applied Surface Science, Vol. 537
2020
-
Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
-
CDrift: An Algorithm to Correct Linear Drift from A Single High-Resolution STEM Image
Microscopy and Microanalysis, Vol. 26, Núm. 5, pp. 913-920
-
Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells
Solar Energy Materials and Solar Cells, Vol. 210