Publicaciones en colaboración con investigadores/as de Grenoble Alpes University (14)

2022

  1. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

2020

  1. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  3. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837

  6. Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration

    Crystal Growth and Design, Vol. 18, Núm. 12, pp. 7628-7632

2017

  1. MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11

2016

  1. Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 10, pp. 2570-2574

  2. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Applied Physics Letters, Vol. 108, Núm. 18

2014

  1. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Applied Physics Letters, Vol. 105, Núm. 17