SERGIO IGNACIO
MOLINA RUBIO
Catedrático de Universidad
Pierre
Ruterana
Publicaciones en las que colabora con Pierre Ruterana (5)
2002
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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
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Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy
Physica Status Solidi (B) Basic Research
2001
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A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)
Applied Physics Letters, Vol. 79, Núm. 22, pp. 3588-3590
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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690