Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (46)

2018

  1. Exploring the capability of HAADF-STEM techniques to characterize graphene distribution in nanocomposites by simulations

    Journal of Nanomaterials, Vol. 2018

2014

  1. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

    Materials Express, Vol. 4, Núm. 1, pp. 41-53

2013

  1. Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy

    Journal of Physics: Conference Series

  2. Extreme voltage recovery in GaAs:Ti intermediate band solar cells

    Solar Energy Materials and Solar Cells

2012

  1. Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography

    Nanoscale Research Letters, Vol. 7, Núm. 1, pp. 1-6

  2. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    Conference Record of the IEEE Photovoltaic Specialists Conference

2011

  1. Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy

    Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581

  2. Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

    AIP Conference Proceedings

  3. Strain balanced quantum posts

    Applied Physics Letters, Vol. 98, Núm. 17

  4. Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

    Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610

  5. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

  6. Three dimensional atom probe imaging of GaAsSb quantum rings

    Ultramicroscopy, Vol. 111, Núm. 8, pp. 1073-1076

2010

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    Nanotechnology, Vol. 21, Núm. 14

  2. Exploring semiconductor quantum dots and wires by high resolution electron microscopy

    Journal of Physics: Conference Series

  3. Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

    Nanoscale Research Letters, Vol. 5, Núm. 12, pp. 1913-1916

  4. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Nanotechnology, Vol. 21, Núm. 32

  5. Strain balanced quantum posts for intermediate band solar cells

    Conference Record of the IEEE Photovoltaic Specialists Conference

  6. Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 23

  7. Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

    Journal of Physics: Conference Series

  8. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    Applied Surface Science, Vol. 256, Núm. 18, pp. 5659-5661