Publicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (22)

2012

  1. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

2008

  1. STRESS COMPENSATION BY GaP MONOLAYERS FOR STACKED InAs/GaAs QUANTUM DOTS SOLAR CELLS

    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4

2004

  1. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  2. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

2001

  1. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  2. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406

  3. MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

    Journal of Crystal Growth, Vol. 201, pp. 415-418

  4. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452

  5. Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy

    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS

  6. The effect of Si doping on the defect structure of GaN/AIN/Si(111)

    Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364

1998

  1. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278

  2. Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

    Thin Solid Films, Vol. 317, Núm. 1-2, pp. 270-273

1997

  1. Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

    Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291

  2. Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 106-109

1995

  1. Design of InGaAs linear graded buffer structures

    Applied Physics Letters, pp. 3334

  2. Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs

    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995