Publicaciones en las que colabora con TERESA BEN FERNANDEZ (12)

2023

  1. Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

    Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797

2014

  1. Transmission electron microscopy of 1D-nanostructures

    Transmission Electron Microscopy Characterization of Nanomaterials (Springer Berlin Heidelberg), pp. 657-701

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2011

  1. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

2009

  1. Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

    Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

  2. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  3. Excitons in coupled InAsInP self-assembled quantum wires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12

  4. Incorporation of Sb in InAsGaAs quantum dots

    Applied Physics Letters, Vol. 91, Núm. 26

2006

  1. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658