Publicaciones en las que colabora con Álvaro Fernández González (19)

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

2019

  1. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

    Solar Energy Materials and Solar Cells, Vol. 200

2018

  1. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

    Applied Surface Science, Vol. 444, pp. 260-266

2017

  1. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

    Nanotechnology, Vol. 28, Núm. 42

  2. Strain-balanced type-II superlattices for efficient multi-junction solar cells

    Scientific Reports, Vol. 7, Núm. 1

  3. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  4. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2016

  1. General route for the decomposition of InAs quantum dots during the capping process

    Nanotechnology, Vol. 27, Núm. 12

  2. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135

  3. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots

    Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161

2015

  1. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

  2. Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

    Proceedings of SPIE - The International Society for Optical Engineering

2014

  1. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    Journal of Applied Physics, Vol. 116, Núm. 13

  2. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Applied Physics Letters, Vol. 105, Núm. 4

2012

  1. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

    Journal of Physics: Conference Series

  2. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7

2004

  1. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (1 1 1)b substrates by molecular beam epitaxy

    Journal of Crystal Growth, Vol. 270, Núm. 1-2, pp. 62-68

2001

  1. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392