Publicaciones en colaboración con investigadores/as de Universidade de Lisboa (24)

2023

  1. Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

    Advanced Functional Materials, Vol. 33, Núm. 13

2022

  1. Strain-modulated optical response in 2D MoSe2made by Na-assisted CVD on glass

    Applied Physics Letters, Vol. 120, Núm. 21

2021

  1. Novel Polymorph of GaSe

    Advanced Functional Materials, Vol. 31, Núm. 48

  2. Wafer-Scale Fabrication of 2D β-In2Se3 Photodetectors

    Advanced Optical Materials, Vol. 9, Núm. 1

2020

  1. Global scaling of the heat transport in fusion plasmas

    Physical Review Research, Vol. 2, Núm. 1

  2. Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

    Surface and Coatings Technology, Vol. 397

2016

  1. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

    Scientific Reports, Vol. 6

2015

  1. Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

    Nanotechnology, Vol. 26, Núm. 42

  2. First examples of neutral and cationic indenyl nickel(II) complexes bearing arsine or stibine ligands: Highly active catalysts for the oligomerisation of styrene

    Dalton Transactions, Vol. 44, Núm. 39, pp. 17015-17019

  3. Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

    Microscopy and Microanalysis, Vol. 21, Núm. 4, pp. 994-1005

  4. The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering

    Journal of Nanomaterials, Vol. 2015

2014

  1. ZnO micro/nanocrystals grown by laser assisted flow deposition

    Proceedings of SPIE - The International Society for Optical Engineering

2013

  1. Influence of RF-sputtering power on formation of vertically stacked Si 1-x Ge x nanocrystals between ultra-thin amorphous Al 2 O 3 layers: Structural and photoluminescence properties

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 38

  2. Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

    Nanotechnology, Vol. 24, Núm. 50

2012

  1. Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation

    Materials Research Society Symposium Proceedings

  2. Mechanisms of damage formation in Eu-implanted AlN

    Journal of Applied Physics, Vol. 112, Núm. 7

  3. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    Journal of Applied Physics

2011

  1. A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature

    Journal of Applied Physics, Vol. 109, Núm. 1

  2. Designing novel hybrid materials by one-pot co-condensation: From hydrophobic mesoporous silica nanoparticles to superamphiphobic cotton textiles

    ACS Applied Materials and Interfaces, Vol. 3, Núm. 7, pp. 2289-2299

  3. Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction

    EPL, Vol. 96, Núm. 4