Publicaciones en colaboración con investigadores/as de University of Montpellier (23)

2022

  1. 3.4% Solar-to-Ammonia Efficiency from Nitrate Using Fe Single Atomic Catalyst Supported on MoS2 Nanosheets

    Advanced Functional Materials, Vol. 32, Núm. 18

2021

  1. 2.6% cm-2Single-Pass CO2-to-CO Conversion Using Ni Single Atoms Supported on Ultra-Thin Carbon Nanosheets in a Flow Electrolyzer

    ACS Catalysis, Vol. 11, Núm. 20, pp. 12701-12711

  2. Improved electrochemical conversion of CO2 to multicarbon products by using molecular doping

    Nature Communications, Vol. 12, Núm. 1

  3. Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

    Solar Energy Materials and Solar Cells, Vol. 219

2010

  1. Natural oxidation of InN quantum dots: The role of cubic InN

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

    Nanotechnology, Vol. 21, Núm. 18

2009

  1. Structural changes during the natural aging process of InN quantum dots

    Journal of Applied Physics, Vol. 105, Núm. 1

2008

  1. Strain relief and nucleation mechanisms of InN quantum dots

    Quantum Dots: Research, Technology and Applications (Nova Science Publishers, Inc.), pp. 267-298

2007

  1. Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

    Applied Physics Letters, Vol. 91, Núm. 7

  2. Morphology and stress control in UHVCVD of 3C-SiC(100) on Si

    Materials Science Forum

  3. Morphology and stress control in UHVCVD of 3C-SiC(100) on Si

    Materials Science Forum

  4. Strain mapping at the atomic scale in highly mismatched heterointerfaces

    Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593

  5. Strain relief analysis of InN quantum dots grown on GaN

    Nanoscale Research Letters, Vol. 2, Núm. 9, pp. 442-446

2006

  1. Ge-modified Si(100) substrates for the growth of 3C-SiC (100)

    Applied Physics Letters, Vol. 88, Núm. 21

  2. Investigation of the interface manipulation in SiC(100) on Si (100) with isovalent impurities

    Surface and Interface Analysis

  3. Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

    Applied Physics Letters, Vol. 88, Núm. 15

  4. Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

    Physica Status Solidi (C) Current Topics in Solid State Physics

2005

  1. Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

    Applied Physics Letters, Vol. 87, Núm. 26, pp. 1-3

  2. Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)

    Applied Physics Letters, Vol. 87, Núm. 4

  3. Stress manipulation in CVD grown SiC on Si by mono- and sub-monolayer Ge precoverages

    Proceedings - Electrochemical Society