Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Departamento
École Polytechnique Fédérale de Lausanne
Lausana, SuizaPublicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (28)
2020
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Global scaling of the heat transport in fusion plasmas
Physical Review Research, Vol. 2, Núm. 1
2019
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The Role of Polarity in Nonplanar Semiconductor Nanostructures
Nano Letters, Vol. 19, Núm. 6, pp. 3396-3408
2016
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Quantum heterostructures based on GaAs nanomembranes for photonic applications
2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
2015
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Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires
Journal of Crystal Growth, Vol. 420, pp. 47-56
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High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga
Nano Letters, Vol. 15, Núm. 5, pp. 2869-2874
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Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes
Nanoscale, Vol. 7, Núm. 46, pp. 19453-19460
2014
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Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy
Journal of Applied Physics, Vol. 116, Núm. 18
2013
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A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
Journal of Materials Chemistry C, Vol. 1, Núm. 28, pp. 4300-4312
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Bandgap engineering in a nanowire: Self-assembled 0, 1 and 2D quantum structures
Materials Today, Vol. 16, Núm. 6, pp. 213-219
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Gold nanoparticles protected by fluorinated ligands for 19F MRI
Chemical Communications, Vol. 49, Núm. 78, pp. 8794-8796
2012
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Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
Nano Letters, Vol. 12, Núm. 5, pp. 2579-2586
1999
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Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 66, Núm. 1, pp. 151-156
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Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates
Applied Surface Science, Vol. 144-145, pp. 488-491
1996
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Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As
Journal of Applied Physics, Vol. 79, Núm. 11, pp. 8693-8703
1994
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Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation
Journal of Applied Physics, Vol. 76, Núm. 1, pp. 342-346
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Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence
Materials Science and Engineering B, Vol. 24, Núm. 1-3, pp. 124-129
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One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates
Journal of Crystal Growth, Vol. 136, Núm. 1-4, pp. 173-178
1993
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Cathodoluminescence and photoluminescence studies of dislocations in GaAs/AlGaAs quantum wells
Journal of Applied Physics, Vol. 74, Núm. 3, pp. 1997-2003
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Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates
Semiconductor Science and Technology, Vol. 8, Núm. 6, pp. 1063-1068
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Lateral transport in GaAs/AlGaAs quantum wells
Applied Physics Letters, Vol. 62, Núm. 23, pp. 2992-2994