Publicaciones en colaboración con investigadores/as de University of Hannover (8)

2003

  1. HRTEM study of AlxGa1-xN/AlN DBR mirrors

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1178-1181

2002

  1. Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

    GAN AND RELATED ALLOYS-2001

  2. Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

    Materials Research Society Symposium - Proceedings, Vol. 693, pp. 177-182

  3. Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers

    Physica Status Solidi (A) Applied Research

  4. High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS

2001

  1. Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

    Journal of Electronic Materials

  2. Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 299-303

2000

  1. High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

    Journal of Crystal Growth, Vol. 216, Núm. 1, pp. 15-20