Publicaciones en las que colabora con MARIA DEL PILAR VILLAR CASTRO (18)

2023

  1. Evolución de las enseñanzas practicas post-COVID 19: estudio de uncaso en el seno de los grados de ingeniería en tecnología industrial eingeniería mecánica en la Universidad de Cádiz

    Brazilian Journal of Development, Vol. 9, Núm. 7, pp. 22973-22994

2021

  1. Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

    Applied Surface Science, Vol. 537

  2. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

2018

  1. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  2. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

    Applied Surface Science, Vol. 433, pp. 408-418

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

  2. Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11

2015

  1. Potential barrier heights at metal on oxygen-terminated diamond interfaces

    Journal of Applied Physics, Vol. 118, Núm. 20

  2. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Applied Physics Letters, Vol. 105, Núm. 17

  2. Diamond as substrate for 3C-SiC growth: A TEM study

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306

  3. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371

2011

  1. Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1366-1370

  2. Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

    Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432

2010

  1. Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

    Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 904-907

  2. Local boron doping quantification in homoepitaxial diamond structures

    Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 972-975

  3. TEM study of superconducting polycrystalline diamond

    AIP Conference Proceedings

2009

  1. A microstructural study of superconductive nanocrystalline diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 206, Núm. 9, pp. 1986-1990