Física de la Materia Condensada

1988

1. On electronic conduction in the pre-switching region of glassy semiconducting alloys As40Se30Te30 and As20Se50Te30

   Materials Science and Engineering, Vol. 100, Núm. C, pp. 229-234

2. On non-ohmic conduction and the threshold characteristics of a bulk-type switching device based on the chalcogenide glassy semiconductor As0.40Se0.30Te0.30

   Journal of Non-Crystalline Solids, Vol. 105, Núm. 1-2, pp. 123-133

3. On the Joule self-heating current increase corresponding to a non-switching voltage in bulk glassy semiconductors

   Semiconductor Science and Technology, Vol. 3, Núm. 2, pp. 161-164

4. On the electrical conduction and current-controlled negative differential resistance with memory in bulk samples of glassy semiconductor Cu 0.05As0.50Te0.45: NTC thermistor-type behaviour

   Semiconductor Science and Technology, Vol. 3, Núm. 11, pp. 1106-1111

5. On the growth and composition of conductive filaments on the surface of as-se-te bulk glassy semiconductors

   Journal of Materials Research, Vol. 3, Núm. 2, pp. 314-320

6. Structural and electrical properties of the glassy semiconductor system Cu-As-Te - Part 1 Electrical and switching aspects, and their correlation with the structure

   Journal of Materials Science, Vol. 23, Núm. 4, pp. 1399-1404

7. Structural and electrical properties of the glassy semiconductor system Cu-As-Te - Part 2 Structural analysis by X-ray diffraction and space models

   Journal of Materials Science, Vol. 23, Núm. 5, pp. 1709-1717

8. Topological features of Cu15As34Se51 glassy semiconductor

   Journal of Materials Science Letters, Vol. 7, Núm. 2, pp. 105-107