Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Instituto de investigación
National Institute for Materials Science
Tsukuba, JapónPublicaciones en colaboración con investigadores/as de National Institute for Materials Science (9)
2021
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Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
2017
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Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Applied Surface Science, Vol. 395, pp. 200-207
2016
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Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
Applied Physics Letters, Vol. 108, Núm. 18
2013
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Facet engineered Ag3PO4 for efficient water photooxidation
Energy and Environmental Science, Vol. 6, Núm. 11, pp. 3380-3386
2010
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Fabrication and characterization of TiN nanocomposite powders fabricated by DC arc-plasma method
Journal of Alloys and Compounds, Vol. 492, Núm. 1-2, pp. 685-690
2009
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Fabrication and characterization of TiN-Ag nano-dice
Micron, Vol. 40, Núm. 3, pp. 308-312
2004
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Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond
Physica Status Solidi (A) Applied Research