Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (58)

2018

  1. Exploring the capability of HAADF-STEM techniques to characterize graphene distribution in nanocomposites by simulations

    Journal of Nanomaterials, Vol. 2018

  2. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

2017

  1. Strain-balanced type-II superlattices for efficient multi-junction solar cells

    Scientific Reports, Vol. 7, Núm. 1

  2. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  3. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2015

  1. Interfacial effects on the tunneling magnetoresistance in L a0.7 S r0.3Mn O3/MgO/Fe tunneling junctions

    Physical Review B - Condensed Matter and Materials Physics, Vol. 92, Núm. 9

2014

  1. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

    Materials Express, Vol. 4, Núm. 1, pp. 41-53

2013

  1. Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy

    Journal of Physics: Conference Series

  2. Extreme voltage recovery in GaAs:Ti intermediate band solar cells

    Solar Energy Materials and Solar Cells

2012

  1. Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography

    Nanoscale Research Letters, Vol. 7, Núm. 1, pp. 1-6

  2. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  3. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    Conference Record of the IEEE Photovoltaic Specialists Conference

2011

  1. Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy

    Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581

  2. Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

    AIP Conference Proceedings

  3. Strain balanced quantum posts

    Applied Physics Letters, Vol. 98, Núm. 17

  4. Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

    Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610

  5. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

  6. Three dimensional atom probe imaging of GaAsSb quantum rings

    Ultramicroscopy, Vol. 111, Núm. 8, pp. 1073-1076

2010

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    Nanotechnology, Vol. 21, Núm. 14

  2. Exploring semiconductor quantum dots and wires by high resolution electron microscopy

    Journal of Physics: Conference Series