Misfit relaxation of InN quantum dots: Effect of the GaN capping layer
- Lozano, J.G.
- Sánchez, A.M.
- García, R.
- Gonzalez, D.
- Briot, O.
- Ruffenach, S.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2006
Alea: 88
Zenbakia: 15
Mota: Artikulua