Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

  1. Sanchez, A.M.
  2. Ruterana, P.
  3. Molina, S.I.
  4. Pacheco, F.J.
  5. Garcia, R.
Journal:
Physica Status Solidi (B) Basic Research

ISSN: 0370-1972

Year of publication: 2002

Volume: 234

Issue: 3

Pages: 935-938

Type: Conference paper

DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0 GOOGLE SCHOLAR
Data source: Scopus