Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

  1. Sanchez, A.M.
  2. Ruterana, P.
  3. Vennegues, P.
  4. Semond, F.
  5. Pacheco, F.J.
  6. Molina, S.I.
  7. Garcia, R.
  8. Sanchez-Garcia, M.A.
  9. Calleja, E.
Actas:
Materials Research Society Symposium - Proceedings

ISSN: 0272-9172

Ano de publicación: 2002

Volume: 743

Páxinas: 157-162

Tipo: Achega congreso

DOI: 10.1557/PROC-743-L3.25 GOOGLE SCHOLAR