Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

  1. Sánchez, A.M.
  2. Pacheco, F.J.
  3. Molina, S.I.
  4. Garcia, R.
  5. Ruterana, P.
  6. Sánchez-García, M.A.
  7. Calleja, E.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2001

Volumen: 78

Número: 18

Pages: 2688-2690

Type: Article

DOI: 10.1063/1.1368373 GOOGLE SCHOLAR
La source de données: Scopus