Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
- González, D.
- Aragón, G.
- Araújo, D.
- De Castro, M.J.
- García, R.
ISSN: 0003-6951
Année de publication: 1999
Volumen: 74
Número: 18
Pages: 2649-2651
Type: Article