Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

  1. Sánchez-García, M.A.
  2. Naranjo, F.B.
  3. Pau, J.L.
  4. Jiménez, A.
  5. Calleja, E.
  6. Muñoz, E.
  7. Molina, S.I.
  8. Sánchez, A.M.
  9. Pacheco, F.J.
  10. García, R.
Journal:
Physica Status Solidi (A) Applied Research

ISSN: 0031-8965

Year of publication: 1999

Volume: 176

Issue: 1

Pages: 447-452

Type: Article

DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A GOOGLE SCHOLAR
Data source: Scopus