Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

  1. Calleja, E.
  2. Sánchez-García, M.A.
  3. Sánchez, F.J.
  4. Calle, F.
  5. Naranjo, F.B.
  6. Muñoz, E.
  7. Molina, S.I.
  8. Sánchez, A.M.
  9. Pacheco, F.J.
  10. García, R.
Journal:
Journal of Crystal Growth

ISSN: 0022-0248

Year of publication: 1999

Volume: 201

Pages: 296-317

Type: Article

DOI: 10.1016/S0022-0248(98)01346-3 GOOGLE SCHOLAR