Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

  1. Lloret, F.
  2. Eon, D.
  3. Bustarret, E.
  4. Fiori, A.
  5. Araujo, D.
Revue:
Nanomaterials

ISSN: 2079-4991

Année de publication: 2018

Volumen: 8

Número: 7

Type: Article

DOI: 10.3390/NANO8070480 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus