Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond

  1. Tajani, A.
  2. Tavares, C.
  3. Wade, M.
  4. Baron, C.
  5. Gheeraert, E.
  6. Bustarret, E.
  7. Koizumi, S.
  8. Araujo, D.
Journal:
Physica Status Solidi (A) Applied Research

ISSN: 0031-8965

Year of publication: 2004

Volume: 201

Issue: 11

Pages: 2462-2466

Type: Conference paper

DOI: 10.1002/PSSA.200405183 GOOGLE SCHOLAR
Data source: Scopus