Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

  1. Ulloa, J.M.
  2. Reyes, D.F.
  3. Utrilla, A.D.
  4. Guzman, A.
  5. Hierro, A.
  6. Ben, T.
  7. González, D.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2014

Alea: 116

Zenbakia: 13

Mota: Artikulua

DOI: 10.1063/1.4896963 GOOGLE SCHOLAR
Datuen iturria: Scopus