Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

  1. Khan, A.A.
  2. Repiso, E.
  3. Herrera, M.
  4. Carrington, P.J.
  5. De La Mata, M.
  6. Pizarro, J.
  7. Krier, A.
  8. Molina, S.I.
Aldizkaria:
Nanotechnology

ISSN: 1361-6528 0957-4484

Argitalpen urtea: 2020

Alea: 31

Zenbakia: 10

Mota: Artikulua

DOI: 10.1088/1361-6528/AB59F8 GOOGLE SCHOLAR