Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

  1. Herrera, M.
  2. Chi, M.
  3. Bonds, M.
  4. Browning, N.D.
  5. Woolman, J.N.
  6. Kvaas, R.E.
  7. Harris, S.F.
  8. Rhiger, D.R.
  9. Hill, C.J.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Any de publicació: 2008

Volum: 93

Número: 9

Tipus: Article

DOI: 10.1063/1.2977589 GOOGLE SCHOLAR