Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

  1. Luna, E.
  2. Beltrán, A.M.
  3. Sánchez, A.M.
  4. Molina, S.I.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Any de publicació: 2012

Volum: 101

Número: 1

Tipus: Article

DOI: 10.1063/1.4731790 GOOGLE SCHOLAR
Font de les dades: Scopus