Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

1. Fedler, F.
2. Stemmer, J.
3. Hauenstein, R.J.
4. Rotter, T.
5. Sanchez, A.M.
6. Ponce, A.
7. Molina, S.I.
8. Mistele, D.
9. Klausing, H.
10. Semchinova, O.
11. Aderhold, J.
12. Graul, J.