Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)

  1. Zgheib, Ch.
  2. McNeil, L.E.
  3. Kazan, M.
  4. Masri, P.
  5. Morales, F.M.
  6. Ambacher, O.
  7. Pezoldt, J.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2005

Volume: 87

Issue: 4

Type: Article

DOI: 10.1063/1.1999858 GOOGLE SCHOLAR
Data source: Scopus