Selectively boron doped homoepitaxial diamond growth for power device applications

  1. Lloret, F.
  2. Eon, D.
  3. Bustarret, E.
  4. Donatini, F.
  5. Araujo, D.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2021

Volume: 118

Issue: 2

Type: Article

DOI: 10.1063/5.0031478 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus