Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

  1. Palomo, F.R.
  2. Fernández-Martínez, P.
  3. Mogollón, J.M.
  4. Hidalgo, S.
  5. Aguirre, M.A.
  6. Flores, D.
  7. López-Calle, I.
  8. De Agapito, J.A.
Revue:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

ISSN: 0894-3370,  1099-1204

Année de publication: 2010

Volumen: 23

Número: 4-5

Pages: 379-399

Type: Communication dans un congrès

DOI: 10.1002/JNM.736 GOOGLE SCHOLAR
La source de données: Scopus