Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
- Alam, E.A.
- Cortés, I.
- Besland, M.-P.
- Goullet, A.
- Lajaunie, L.
- Regreny, P.
- Cordier, Y.
- Brault, J.
- Cazarré, A.
- Isoird, K.
- Sarrabayrouse, G.
- Morancho, F.
Journal:
Journal of Applied Physics
ISSN: 0021-8979
Year of publication: 2011
Volume: 109
Issue: 8
Type: Article