Electrical characterization of Si-donor-related shallow and deep states in InGaAlP alloys grown by metalorganic chemical vapor deposition

  1. Suzuki, M.
  2. Ishikawa, M.
  3. Itaya, K.
  4. Nishikawa, Y.
  5. Hatakoshi, G.-i.
  6. Kokubun, Y.
  7. Nishizawa, J.-i.
  8. Oyama, Y.
Zeitschrift:
Journal of Crystal Growth

ISSN: 0022-0248

Datum der Publikation: 1991

Ausgabe: 115

Nummer: 1-4

Seiten: 498-503

Art: Artikel

DOI: 10.1016/0022-0248(91)90793-5 GOOGLE SCHOLAR