Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy
- Fedler, F
- Stemmer, J
- Hauenstein, RJ
- Rotter, T
- Sanchez, AM
- Ponce, A
- Molina, S
- Mistele, D
- Klausing, H
- Semchinova, O
- Aderhold, J
- Graul, J
- Northrup, JE (coord.)
- Neugebauer, J (coord.)
- Look, DC (coord.)
- Chichibu, SF (coord.)
- Riechert, H (coord.)
ISSN: 0272-9172
ISBN: 1-55899-629-X
Ano de publicación: 2002
Volume: 693
Páxinas: 177-182
Congreso: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting
Tipo: Achega congreso