Publicaciones en las que colabora con SERGIO IGNACIO MOLINA RUBIO (97)

2020

  1. Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques

    Nanotechnology, Vol. 31, Núm. 2

2015

  1. Mapping the plasmonic response of gold nanoparticles embedded in TiO2 thin films

    Nanotechnology, Vol. 26, Núm. 40

2014

  1. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

    Materials Express, Vol. 4, Núm. 1, pp. 41-53

  2. Transmission electron microscopy of 1D-nanostructures

    Transmission Electron Microscopy Characterization of Nanomaterials (Springer Berlin Heidelberg), pp. 657-701

2013

  1. Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy

    Journal of Physics: Conference Series

2012

  1. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

    Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354

  2. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

  3. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    Conference Record of the IEEE Photovoltaic Specialists Conference

  4. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

  5. Production of nanometer-size gaas nanocristals by nanosecond laser ablation in liquid

    Journal of Nanoscience and Nanotechnology

2011

  1. Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

    Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610

  2. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

  3. Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

    Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 11

2010

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    Nanotechnology, Vol. 21, Núm. 14

  2. Inx(GayAl1-y)1-xAs quaternary alloys for quantum dot intermediate band solar cells

    Energy Procedia

  3. Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells

    Energy Procedia

  4. Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

    Journal of Applied Physics, Vol. 108, Núm. 6

  5. Surface nanostructuring of TiO2 thin films by high energy ion irradiation

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 11

2009

  1. A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

    Journal of Crystal Growth, Vol. 311, Núm. 7, pp. 2099-2101

  2. Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

    Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218