Ciencia e Ingeniería de los Materiales
TEP120
University College London
Londres, Reino UnidoPublicaciones en colaboración con investigadores/as de University College London (7)
2021
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Normally-OFF Diamond Reverse Blocking MESFET
IEEE Transactions on Electron Devices, Vol. 68, Núm. 12, pp. 6279-6285
2018
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Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
IET Optoelectronics, Vol. 12, Núm. 1, pp. 2-4
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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Journal of Electronic Materials
2017
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2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique
Infrared Physics and Technology, Vol. 81, pp. 320-324
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Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping
Applied Physics Letters, Vol. 110, Núm. 9
2012
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Defect mediated extraction in InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 102, pp. 142-147
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Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
Journal of Applied Physics, Vol. 111, Núm. 4