Materiales y Nanotecnología para la Innovación
TEP946
University of Giessen
Giessen, AlemaniaPublicaciones en colaboración con investigadores/as de University of Giessen (11)
2018
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Optical Analysis of Oxygen Self-Diffusion in Ultrathin CeO2 Layers at Low Temperatures
Advanced Energy Materials, Vol. 8, Núm. 29
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Passivation layers for nanostructured photoanodes: Ultra-thin oxides on InGaN nanowires
Journal of Materials Chemistry A, Vol. 6, Núm. 2, pp. 565-573
2016
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UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Nano Letters, Vol. 16, Núm. 5, pp. 3260-3267
2015
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Long-lived excitons in GaN/AlN nanowire heterostructures
Physical Review B - Condensed Matter and Materials Physics, Vol. 91, Núm. 20
2014
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Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures
Nano Letters, Vol. 14, Núm. 3, pp. 1665-1673
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Probing the internal electric field in GaN/AlGaN nanowire heterostructures
Nano Letters, Vol. 14, Núm. 9, pp. 5118-5122
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Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
Applied Physics Letters, Vol. 104, Núm. 10
2013
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A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
Journal of Materials Chemistry C, Vol. 1, Núm. 28, pp. 4300-4312
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Bandgap engineering in a nanowire: Self-assembled 0, 1 and 2D quantum structures
Materials Today, Vol. 16, Núm. 6, pp. 213-219
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Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy
Journal of Applied Physics, Vol. 114, Núm. 10
2012
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Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
Nano Letters, Vol. 12, Núm. 5, pp. 2579-2586